Substrate Biasing Approach to Generate Artificial Oxygen Vacancy for Stable Nitrogen-Doped IGZO Thin-Film Transistors | Intelligent Semiconductor and Wearable Devices

Substrate Biasing Approach to Generate Artificial Oxygen Vacancy for Stable Nitrogen-Doped IGZO Thin-Film Transistors

2021/08/26
Jueun Kim, Seongmin Park, Gilsu Jeon, Suwon Seong, Yoonyoung Chung
International Meeting on Information Display (IMID), Seoul, Korea

Category: Categories: Conference